Philips bf1109 r wr free download

File name bf1109_r_wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 08 Supersedes data of 1997 Sep 03 NXP Semiconductors Product specification BF1109; BF1109R; N-channel dual-gate MOS-FETs BF1109WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION 3 handbook, 2 columns 4 forward transfer admittance to input 1 source capacitance ratio 2 drain Low noise gain controlled amplifier up to 1 GHz 3 gate 2 2 1 Internal self-biasing circuit to 4 gate 1 Top view MSB035 ensure good cross-modulation performance during AGC and good DC stabilization. BF1109R marking code: NBp. APPLICATIONS Fig.2 Simplified outline (SOT143R). VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment. 4 handbook, 2 columns 3 ok, halfpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated 1 2 2 1 diodes between gates and source Top view MSB014 Top view MSB842 protect against excessive input voltage surges. The BF1109, BF1109 marking code: NFp. BF1109WR marking code: NB. BF1109R and BF1109WR are encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline SOT143R and SOT343R plastic (SOT143B). (SOT343R). packages respect